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MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Reverse Voltage 35 to 60 V Forward Current 10 A
Schottky Barrier Rectifiers
ITO-220AC (MBRF10Hxx) TO-220AC (MBR10Hxx)
0.415 (10.54) MAX. 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.410 (10.41) 0.390 (9.91) PIN 1 0.160 (4.06) 0.140 (3.56) 2 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46)
CASE
0.405 (10.27) 0.383 (9.72) 0.185 (4.70) 0.175 (4.44)
0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.140 (3.56) DIA. 0.130 (3.30) 0.131 (3.39) DIA. 0.122 (3.08)
DIA.
0.055 (1.39) 0.045 (1.14)
0.600 (15.5) 0.580 (14.5) 0.603 (15.32) 0.573 (14.55)
1
0.676 (17.2) 0.646 (16.4) 0.350 (8.89) 0.330 (8.38)
PIN 2
0.635 (16.13) 0.625 (15.87)
0.350 (8.89) 0.330 (8.38)
0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.060 (1.52)
PIN 1
0.110 (2.80) 0.100 (2.54)
PIN 1 PIN 2
PIN 2
0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.027 (0.68) 0.022 (0.56) 0.014 (0.36)
0.205 (5.20) 0.195 (4.95)
0.037 (0.94) 0.027 (0.69)
0.022 (0.55) 0.014 (0.36)
TO-263AB (MBRB10Hxx)
0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN K 0.055 (1.40) 0.047 (1.19) 1 K 2 0.624 (15.85) 0.591 (15.00) 0-0.01 (0-0.254) 0.110 (2.79) 0.090 (2.29) 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41)
PIN 1 PIN 2 K - HEATSINK
Mounting Pad Layout TO-263AB
0.42 (10.66)
0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14)
0.33 (8.38) 0.63 (17.02)
Dimensions in inches and (millimeters)
0.360 (9.14) 0.320 (8.13)
0.08 (2.032) 0.24 (6.096)
0.12 (3.05)
0.021 (0.53) 0.014 (0.36) 0.140 (3.56) 0.110 (2.79)
0.205 (5.20) 0.195 (4.95)
Features
* Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 * Metal silicon junction, majority carrier conduction * Low forward voltage drop, low power loss and high efficiency * Guardring for overvoltage protection * For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications * High temperature soldering guaranteed: 250 C/10 seconds, 0.25" (6.35 mm) from case * Rated for reverse surge and ESD * 175 C maximum operation junction temperature
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Mechanical Data
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 oz., 2.24 g
Document Number 88780 03-Mar-03
MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
(TC = 25 C unless otherwise noted)
Symbol VRRM VRWM VDC IF(AV) IFRM EAS IFSM IRRM ERSM VC dv/dt TJ TSTG VISOL
MBR10H35 MBR10H45 MBR10H50 MBR10H60
Unit V V V A A mJ A
Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current (See fig.1) Peak repetitive forward current at TC = 150 C (20 KHz sq. wave) Non-repetitive avalanche energy at 25 C, IAS = 4 A, L = 10 mH Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) Peak repetitive reverse current at tp = 2.0 s, 1 KHZ Peak non-repetitive reverse energy (8/20 s waveform) Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 k Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range RMS Isolation voltage (MBRF type only) from terminals to heatsink with t = 1.0 second, RH 30%
35 35 35
45 45 45 10 20 80 150 1.0 20 25 10,000
50 50 50
60 60 60
0.5 10
A mJ kV V/s C C V
-65 to +175 -65 to +175 4500 3500(2) 1500(3)
(1)
Electrical Characteristics (TC = 25C unless otherwise noted)
Parameter Maximum instantaneous forward voltage(4) at at at at IF = IF = IF = IF = 10 10 20 20 A A A A TJ = 25 C TJ = 125 C TJ = 25 C TJ =125 C TJ = 25 C TJ =125 C Symbol
MBR10H35, MBR10H45 MBR10H50, MBR10H60
Typ - 0.49 - 0.62 - 4.0
Max 0.63 0.55 0.75 0.68 100 12
Typ - 0.57 - 0.68 - 2.0
Max 0.71 0.61 0.85 0.71 100 12
Unit
VF
V A mA
Maximum instantaneous reverse current at rated DC blocking voltage(4)
IR
Thermal Characteristics (TC = 25 C unless otherwise noted)
Parameter Maximum thermal resistance
Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset (2) Clip mounting (on case), where leads do overlap heatsink
Symbol RJC
MBR 2.0
MBRF 4.0
MBRB 2.0
Unit C/W
(3) Screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19") (4) Pulse test: 300 s pulse width, 1% duty cycle
Ordering Information
Product MBR10H35 - MBR10H60 MBRF10H35 - MBRF10H60 MBRB10H35 - MBRB10H60 Case TO-220AC ITO-220AC TO-263AB Package Code 45 45 31 45 81 Package Option Anti-Static tube, 50/tube, 2K/carton Anti-Static tube, 50/tube, 2K/carton 13" reel, 800/reel, 4.8K/carton Anti-Static tube, 50/tube, 2K/carton Anti-Static 13" reel, 800/reel, 4.8K/carton
Document Number 88780 03-Mar-03
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MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
15 175
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Peak Forward Surge Current (A)
TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method)
Average Forward Current (A)
150
MBR, MBRB 10
125 100 75 50 25
MBRF 5
0 0 25 50 75 100 125 150 175
1
10
100
Case Temperature (C)
Number of Cycles at 60 HZ
Fig. 3 - Typical Instantaneous Forward Characteristics
Instantaneous Reverse Leakage Current (mA)
100 100
Fig. 4 - Typical Reverse Characteristics
Instantaneous Forward Current (A)
10
10
TJ = 150C
1 TJ = 125C 0.1 0.01 MBR10H35 -- MBR10H45 MBR10H50 -- MBR10H60 TJ = 25C 0 20 40 60 80 100
TJ = 150C 1.0
TJ = 25C TJ = 125C
0.1 MBR10H35 -- MBR10H45 MBR10H50 -- MBR10H60 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.001
0.0001
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capacitance
10000 MBR10H35 -- MBR10H45 MBR10H50 -- MBR10H60
Fig. 6 - Typical Transient Thermal Impedance
10
Transeint Thermal Impedance (C/W)
pF - Junction Capacitance
TJ = 25C f = 1.0 MHZ Vsig = 50mVp-p
1000
1
100 0 1 10 100
0.1 0.01
0.1
1
10
Reverse Voltage (V) Document Number 88780 03-Mar-03
t, Pulse Duration (sec.) www.vishay.com 3

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